PLANAR AVALANCHE PHOTODIODE WITH A LOW-DOPED, REDUCED CURVATURE JUNCTION

被引：7

作者：

CHI, GC

MUEHLNER, DJ

OSTERMAYER, FW

FREUND, JM

PAWELEK, R

MCCOY, RJ

PETICOLAS, LJ

MATTERA, VD

机构：

来源：

APPLIED PHYSICS LETTERS | 1987年 / 50卷 / 17期

关键词：

D O I：

10.1063/1.97948

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1158 / 1160

页数：3

共 10 条

[1] HIGH-PERFORMANCE AVALANCHE PHOTO-DIODE WITH SEPARATE ABSORPTION GRADING AND MULTIPLICATION REGIONS [J].

CAMPBELL, JC ;

DENTAI, AG ;

HOLDEN, WS ;

KASPER, BL .

ELECTRONICS LETTERS, 1983, 19 (20) :818-820

[2] QUANTUM WELL STRUCTURES OF IN0.53GA0.47AS/INP GROWN BY HYDRIDE VAPOR-PHASE EPITAXY IN A MULTIPLE CHAMBER REACTOR [J].

DIGIUSEPPE, MA ;

TEMKIN, H ;

PETICOLAS, L ;

BONNER, WA .

APPLIED PHYSICS LETTERS, 1983, 43 (10) :906-908

[3]

EKHOLM DT, COMMUNICATION

[4]

ENGLISH JH, UNPUB

[5] PERFORMANCE OF IN0.53GA0.47AS/INP AVALANCHE PHOTO-DIODES [J].

FORREST, SR ;

SMITH, RG ;

KIM, OK .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1982, 18 (12) :2040-2048

[6]

MUEHLNER DJ, UNPUB

[7] PHOTO-ELECTROCHEMICAL ETCHING OF INTEGRAL LENSES ON INGAASP/INP LIGHT-EMITTING-DIODES [J].

OSTERMAYER, FW ;

KOHL, PA ;

BURTON, RH .

APPLIED PHYSICS LETTERS, 1983, 43 (07) :642-644

[8] RELIABILITY OF INGAAS PHOTODIODES FOR SL APPLICATIONS [J].

SAUL, RH ;

CHEN, FS ;

SHUMATE, PW .

AT&T TECHNICAL JOURNAL, 1985, 64 (03) :861-882

[9] A PLANAR INP/INGAASP HETEROSTRUCTURE AVALANCHE PHOTO-DIODE [J].

SHIRAI, T ;

YAMAZAKI, S ;

KAWATA, H ;

NAKAJIMA, K ;

KANEDA, T .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (09) :1404-1407

[10]

TORIKAI T, 1984, 10TH P EUR C OPT COM, P220

← 1 →