THRESHOLD ENERGIES FOR IMPACT IONIZATION BY ELECTRONS AND HOLES IN INP

被引：41

作者：

PEARSALL, TP

机构：

[1] L.C.R. Thomson-CSF

来源：

APPLIED PHYSICS LETTERS | 1979年 / 35卷 / 02期

关键词：

D O I：

10.1063/1.91068

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The threshold conditions for impact ionization in InP at 300 K have been calculated from the electronic band structure along the three major symmetry axes. These calculations show that conditions for electron-initiated impact ionization in InP are much more favorable than in GaAs.

引用

页码：168 / 170

页数：3

共 7 条

[1] THRESHOLD ENERGIES FOR ELECTRON-HOLE PAIR PRODUCTION BY IMPACT IONIZATION IN SEMICONDUCTORS
ANDERSON, CL
CROWELL, CR
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[2] DISTRIBUTION FUNCTIONS AND IONIZATION RATES FOR HOT ELECTRONS IN SEMICONDUCTORS
BARAFF, GA
[J]. PHYSICAL REVIEW, 1962, 128 (06): : 2507 - &
[3] OBSERVATION OF ELECTRONIC BAND-STRUCTURE EFFECTS ON IMPACT IONIZATION BY TEMPERATURE TUNING
CAPASSO, F
NAHORY, RE
POLLACK, MA
PEARSALL, TP
[J]. PHYSICAL REVIEW LETTERS, 1977, 39 (11) : 723 - 726
[4] NONLOCAL PSEUDOPOTENTIAL CALCULATIONS FOR ELECTRONIC-STRUCTURE OF 11 DIAMOND AND ZINCBLENDE SEMICONDUCTORS
CHELIKOWSKY, JR
COHEN, ML
[J]. PHYSICAL REVIEW B, 1976, 14 (02): : 556 - 582
[5] BAND-STRUCTURE DEPENDENCE OF IMPACT IONIZATION BY HOT CARRIERS IN SEMICONDUCTORS - GAAS
PEARSALL, T
CAPASSO, F
NAHORY, RE
POLLACK, MA
CHELIKOWSKY, JR
[J]. SOLID-STATE ELECTRONICS, 1978, 21 (01) : 297 - 302
[6] ORIENTATION DEPENDENCE OF FREE-CARRIER IMPACT IONIZATION IN SEMICONDUCTORS - GAAS
PEARSALL, TP
NAHORY, RE
CHELIKOWSKY, JR
[J]. PHYSICAL REVIEW LETTERS, 1977, 39 (05) : 295 - 298
[7] PEARSALL TP, 1977, GAAS RELATED COMPOUN, P331

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