DIRECT WRITING THROUGH RESIST EXPOSURE USING A FOCUSED ION-BEAM SYSTEM

被引:9
作者
OCHIAI, Y
KOJIMA, Y
MATSUI, S
机构
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1988年 / 6卷 / 04期
关键词
D O I
10.1116/1.584297
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
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页码:1055 / 1061
页数:7
相关论文
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[21]   100 KEV FOCUSED ION-BEAM SYSTEM WITH A EXB MASS FILTER FOR MASKLESS ION-IMPLANTATION [J].
SHIOKAWA, T ;
KIM, PH ;
TOYODA, K ;
NAMBA, S ;
MATSUI, T ;
GAMO, K .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (04) :1117-1120
[22]   EMISSION CHARACTERISTICS OF GALLIUM AND BISMUTH LIQUID-METAL FIELD-ION SOURCES [J].
SWANSON, LW ;
SCHWIND, GA ;
BELL, AE ;
BRADY, JE .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (06) :1864-1867
[23]   CHARACTERISTICS OF SILICON REMOVAL BY FINE FOCUSED GALLIUM ION-BEAM [J].
YAMAGUCHI, H ;
SHIMASE, A ;
HARAICHI, S ;
MIYAUCHI, T .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (01) :71-74