OBSERVATION OF MOBILITY ANISOTROPY OF ELECTRONS ON (110) SILICON SURFACES AT LOW-TEMPERATURES

被引：19

作者：

SAH, CT

EDWARDS, JR

NING, TH

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1972年 / 10卷 / 01期

关键词：

D O I：

10.1002/pssa.2210100117

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

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页码：153 / &

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