SPECTRAL-HOLE BURNING AND CARRIER THERMALIZATION IN GAAS AT ROOM-TEMPERATURE

被引：59

作者：

HUNSCHE, S ^{[1
]}

HEESEL, H ^{[1
]}

EWERTZ, A ^{[1
]}

KURZ, H ^{[1
]}

COLLET, JH ^{[1
]}

机构：

[1] INST NATL SCI APPL, PHYS SOLIDES LAB, F-31077 TOULOUSE, FRANCE

来源：

PHYSICAL REVIEW B | 1993年 / 48卷 / 24期

关键词：

D O I：

10.1103/PhysRevB.48.17818

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report on femtosecond time-resolved transmission and reflectivity measurements on bulk GaAs. Spectral-hole burning is observed, to our knowledge, for the first time in GaAs at room temperature. Carrier thermalization occurs within 200 fs and shows no significant dependence on excitation density or excess energy in the range from 2 x 10(17) cm(-3) to 2 x 10(18) Cm-3 and 35 meV to 90 meV, respectively. Calculations of the carrier dynamics are performed and include full dynamic screening of the carrier-carrier and the carrier LO-phonon interaction. The calculated thermalization times agree well with the experimental results. Negative transmission changes above the spectral hole are mainly caused be and complementary increase of reflectivity, but not by an increase of absorption.

引用

页码：17818 / 17826

页数：9

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