ELECTRIC FORMING AND TELEGRAPH NOISE IN TUNNEL-JUNCTIONS

被引：13

作者：

KOHLSTEDT, H

GUNDLACH, KH

KURIKI, S

机构：

[1] ADVANTEST LABS LTD, HOKKAIDO 04702, JAPAN

[2] DOMAINE UNIV, INST RADIOASTRON MILLIMETR, F-38406 ST MARTIN DHERES, FRANCE

[3] HOKKAIDO UNIV, APPL ELECTR RES INST, SAPPORO, HOKKAIDO 060, JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1993年 / 73卷 / 05期

关键词：

D O I：

10.1063/1.353066

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The normal state resistance of Pb/Bi/In-oxide-Pb/Bi and Pb/Bi/In-oxide-Ag can be changed by applying sufficiently high voltage across the oxide barrier. To explain this effect we discuss an electrical dipole, a donor, a metal ion, and an oxygen migration model. The oxygen migration model best accounts for the experimental observations. Our investigations include telegraph noise measurements. A significant change in the low-frequency noise spectrum before and after electrical forming is found. It is possible to create and destroy two-level signals by applying an electric field on the order of 2.5 X 10(8) V/m.

引用

页码：2564 / 2568

页数：5

共 12 条

[1]

BAKER JM, 1983, J APPL PHYS, V25, P2556

[2]

Bates L., 1954, ACTA CRYSTALLOGR, V7, P144

[3] A LOW-NOISE SIS RECEIVER COVERING THE FREQUENCY-RANGE 215-250 GHZ [J].