HIGH-RESOLUTION SPIN-DEPENDENT RECOMBINATION STUDY OF HOT-CARRIER DAMAGE IN SHORT-CHANNEL MOSFETS - SI-29 HYPERFINE SPECTRA

被引:70
作者
GABRYS, JW
LENAHAN, PM
WEBER, W
机构
[1] The Pennsylvania State University University Park
[2] Corporate Research, Development Siemens AG
关键词
D O I
10.1016/0167-9317(93)90172-2
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We use extremely high sensitivity spin dependent recombination (SDR) measurements to evaluate hot hole injection induced damage in short channel MOSFETs. Our Si-29 hyperfine SDR results provide a moderately precise measure of hot carrier defect electronic localization, hybridization, and (arguably) defect back bond angles. Our results futhermore provide a dramatic illustration of the power of SDR to provide detailed analytical information about individual transistors in real integrated circuits. To the best of our knowledge, our results represent the most sensitive magnetic resonance measurements of any kind ever made in solids.
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收藏
页码:273 / 276
页数:4
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