QUANTITATIVE STUDY OF METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR DAMAGE-INDUCED BY SCANNING TUNNELING MICROSCOPE LITHOGRAPHY

被引：4

作者：

FAYFIELD, T

HIGMAN, TK

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1994年 / 12卷 / 06期

关键词：

D O I：

10.1116/1.587432

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：3731 / 3734

页数：4

共 9 条

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