FAR-INFRARED PHOTON-ASSISTED TRANSPORT THROUGH QUANTUM POINT-CONTACT DEVICES

被引:54
作者
FENG, SC
HU, Q
机构
[1] MIT, ELECTR RES LAB, CAMBRIDGE, MA 02139 USA
[2] MIT, DEPT ELECT ENGN & COMP SCI, CAMBRIDGE, MA 02139 USA
关键词
D O I
10.1103/PhysRevB.48.5354
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We analyze theoretically the phenomenon of photon-assisted quantum transport in split-gate quantum point-contact devices. Both the transverse and longitudinal polarization configurations for the ac photon field are considered. We predict that ministeps should appear in the drain/source conductance versus gate voltage relation, as well as in the I-V(DS) curve in the nonlinear regime, for a quantum point contact irradiated with a coherent far-infrared radiation. The width of the ministeps is proportional to the radiation frequency and the height of the ministeps is a function of the radiation power. We then calculate the current responsivity for this photon-assisted process in the limit of a small radiation signal and show that it is quite comparable to the quantum efficiency e/HBARomega at and above 1 THz if the rf impedance of the device can be matched to that of a planar antenna.
引用
收藏
页码:5354 / 5365
页数:12
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