RECOMBINATIVE DESORPTION OF HYDROGEN FROM THE GE(100)-(2X1) SURFACE - A LASER-INDUCED DESORPTION STUDY

被引：36

作者：

LEWIS, LB ^{[1
]}

SEGALL, J ^{[1
]}

JANDA, KC ^{[1
]}

机构：

[1] UNIV CALIF IRVINE,INST SURFACE & INTERFACE SCI,IRVINE,CA 92717

来源：

JOURNAL OF CHEMICAL PHYSICS | 1995年 / 102卷 / 18期

关键词：

D O I：

10.1063/1.469117

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The recombinative desorption of H2 from Ge(100)-(2×1) is studied by temperature programed desorption (TPD) and laser-induced desorption (LID). In contrast to what is observed for the Si(100)-(2×1) surface, the TPD spectra for Ge(100) do not appear to show appreciable formation of a stable dihydride species. Both the TPD and LID results are consistent with the first-order recombinative desorption kinetics. Analysis of the LID results yield an activation energy, Ea=40±2 kcal/mol and preexponential factor, ν=4×1013±1 s-1. The results are discussed in terms of several mechanisms that have been proposed for the first-order recombinative desorption of hydrogen from Si(100)-(2×1). © 1995 American Institute of Physics.

引用

页码：7222 / 7228

页数：7

共 52 条

[1] HYDROGEN CHEMISORPTION ON 100 (2X1) SURFACES OF SI AND GE [J].

APPELBAUM, JA ;

BARAFF, GA ;

HAMANN, DR ;

HAGSTRUM, HD ;

SAKURAI, T .

SURFACE SCIENCE, 1978, 70 (01) :654-673

[2] SCANNING TUNNELING MICROSCOPY STUDY OF THE ADSORPTION AND RECOMBINATIVE DESORPTION OF HYDROGEN FROM THE SI(100)-2X1 SURFACE [J].

BOLAND, JJ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1992, 10 (04) :2458-2464

[3] STRUCTURE OF THE H-SATURATED SI(100) SURFACE [J].

BOLAND, JJ .

PHYSICAL REVIEW LETTERS, 1990, 65 (26) :3325-3328

[4] EVIDENCE OF PAIRING AND ITS ROLE IN THE RECOMBINATIVE DESORPTION OF HYDROGEN FROM THE SI(100)-2X1 SURFACE [J].

BOLAND, JJ .

PHYSICAL REVIEW LETTERS, 1991, 67 (12) :1539-1542

[5]

CHABAL YJ, 1992, MATER RES SOC SYMP P, V259, P349, DOI 10.1557/PROC-259-349

[6] HIGH-RESOLUTION INFRARED-SPECTROSCOPY OF ADSORBATES ON SEMICONDUCTOR SURFACES - HYDROGEN ON SI(100) AND GE(100) [J].

CHABAL, YJ .

SURFACE SCIENCE, 1986, 168 (1-3) :594-608

[7] ADSORPTION AND DECOMPOSITION OF HYDRIDES ON GE(100) [J].

COHEN, SM ;

YANG, YML ;

ROUCHOUZE, E ;

JIN, T ;

DEVELYN, MP .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1992, 10 (04) :2166-2171

[8] HYDROGEN-HALOGEN CHEMISTRY ON SEMICONDUCTOR SURFACES [J].

COHEN, SM ;

HUKKA, TI ;

YANG, YL ;

DEVELYN, MP .

THIN SOLID FILMS, 1993, 225 (1-2) :155-159

[9] SUBSURFACE STRAIN IN THE GE(001) AND GE(111) SURFACES AND COMPARISON TO SILICON [J].

CULBERTSON, RJ ;

KUK, Y ;

FELDMAN, LC .

SURFACE SCIENCE, 1986, 167 (01) :127-140

[10] SURFACE PI-BONDING AND THE NEAR-1ST-ORDER DESORPTION-KINETICS OF HYDROGEN FROM GE(100)2X1 [J].

DEVELYN, MP ;

COHEN, SM ;

ROUCHOUZE, E ;

YANG, YL .

JOURNAL OF CHEMICAL PHYSICS, 1993, 98 (04) :3560-3563

← 1 2 3 4 5 6 →