Pulsed-laser deposition of selenium

被引：9

作者：

FernandezGuasti, M ^{[1
]}

HaroPoniatowski, E ^{[1
]}

Diamant, R ^{[1
]}

Ponce, L ^{[1
]}

Jimenez, E ^{[1
]}

机构：

[1] UNIV LA HABANA,IMRE,HAVANA,CUBA

来源：

JOURNAL OF MATERIALS SCIENCE | 1995年 / 30卷 / 24期

关键词：

D O I：

10.1007/BF00369674

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The preparation and characterization of amorphous selenium thin films grown by pulsed-laser deposition (PLD) is presented. Two laser excitation regimes at 1064 and 532 nm were studied. Interesting relations between the surface quality and the different experimental parameters were found. High-purity thin films were produced with surface quality similar to that obtained by a thermal process. A study of the emission spectra of the plasma generated during ablation is included.

引用

页码：6253 / 6256

页数：4

共 13 条

[1] Berger S. B., 1979, Physics of Selenium and Tellurium, P256
[2] GROWTH OF THIN-FILMS BY LASER-INDUCED EVAPORATION
CHEUNG, JT
SANKUR, H
[J]. CRC CRITICAL REVIEWS IN SOLID STATE AND MATERIALS SCIENCES, 1988, 15 (01): : 63 - 109
[3] EPITAXIAL-GROWTH OF HG0.7CD0.3 TE BY LASER-ASSISTED DEPOSITION
CHEUNG, JT
[J]. APPLIED PHYSICS LETTERS, 1983, 43 (03) : 255 - 257
[4] CHEUNG JT, 1992, MRS BULL, V17, P32
[5] OPTICAL INTERFERENCE METHOD FOR APPROXIMATE DETERMINATION OF REFRACTIVE-INDEX AND THICKNESS OF A TRANSPARENT LAYER
GOODMAN, AM
[J]. APPLIED OPTICS, 1978, 17 (17): : 2779 - 2787
[6] GREY DE, 1972, AM I PHYSICS HDB, P6
[7] CHARACTERIZATION OF THE PULSED LASER EVAPORATION PROCESS - SELENIUM THIN-FILM FORMATION
HANSEN, SG
ROBITAILLE, TE
[J]. APPLIED PHYSICS LETTERS, 1987, 50 (06) : 359 - 361
[8] HUBLER GK, 1992, MRS BULL, V17, P2
[9] PONCE L, 1993, OPTOELECTRONIC MATER, P213
[10] PONIATOWSKI EH, 1992, OPT LETT, V17, P252

← 1 2 →