A PHENOMENOLOGICAL MODEL OF THE RED LUMINESCENCE KINETICS IN ZNTE-O

被引:2
作者
HJALMARSON, HP
NORRIS, CB
机构
关键词
D O I
10.1063/1.338225
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:734 / 737
页数:4
相关论文
共 12 条
[1]   FLUORESCENT DECAY TIMES OF EXCITONS BOUND TO ISOELECTRONIC TRAPS IN GAP AND ZNTE [J].
CUTHBERT, JD ;
THOMAS, DG .
PHYSICAL REVIEW, 1967, 154 (03) :763-&
[2]   TEMPERATURE-DEPENDENT RADIATIVE RECOMBINATION MECHANISMS IN GAP(ZN,O) AND GAP(CD,O) [J].
CUTHBERT, JD ;
HENRY, CH ;
DEAN, PJ .
PHYSICAL REVIEW, 1968, 170 (03) :739-+
[3]   SIMPLIFIED ANALYSIS OF ELECTRON-HOLE RECOMBINATION IN ZN-DOPED AND O-DOPED GAP [J].
HENRY, CH ;
BACHRACH, RZ ;
SCHUMAKER, NE .
PHYSICAL REVIEW B, 1973, 8 (10) :4761-4767
[4]   ISOELECTRONIC DONORS AND ACCEPTORS [J].
HOPFIELD, JJ ;
THOMAS, DG ;
LYNCH, RT .
PHYSICAL REVIEW LETTERS, 1966, 17 (06) :312-&
[6]   EFFECT OF ANNEALING PROCEDURES ON PHOTOLUMINESCENCE AND ELECTROLUMINESCENCE IN ZNTE [J].
KENNEDY, DI ;
RUSS, MJ .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1971, 32 (04) :847-&
[7]   ISOELECTRONIC OXYGEN TRAP IN ZNTE [J].
MERZ, JL .
PHYSICAL REVIEW, 1968, 176 (03) :961-&
[10]   TEMPERATURE, INJECTION LEVEL, AND FREQUENCY DEPENDENCES OF SOME EXTRINSIC LUMINESCENCE BANDS IN ZNTE [J].
NORRIS, CB .
JOURNAL OF ELECTRONIC MATERIALS, 1979, 8 (06) :733-748