INFRARED PHOTOVOLTAIC DETECTORS FROM ION-IMPLANTED CDXHG1-XTE

被引：39

作者：

MARINE, J

MOTTE, C

机构：

[1] CEN,LAB ELECTR & TECHNOL INFORMATIQUE,BP 85,38 041 GRENOBLE,FRANCE

[2] SOC ANONYME TELECOMMUN,41 RUE CANTAGRE,75 013 PARIS,FRANCE

来源：

关键词：

D O I：

10.1063/1.1654954

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：450 / 452

页数：3

共 6 条

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[2] TYPE CONVERSION AND N-P JUNCTION FORMATION IN HG1-XCDXTE PRODUCED BY PROTON BOMBARDMENT
FOYT, AG
HARMAN, TC
DONNELLY, JP
[J]. APPLIED PHYSICS LETTERS, 1971, 18 (08) : 321 - &
[3] KOHN AN, 1969, IEEE T ELECTRON DEVI, VED16, P885
[4] THE INTERPRETATION OF THE PROPERTIES OF INDIUM ANTIMONIDE
MOSS, TS
[J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1954, 67 (418): : 775 - 782
[5] STELZER EL, 1969, IEEE T ELECTRON DEVI, VED16, P880
[6] CDCHIHG1-CHITE INFRARED PHOTOVOLTAIC DETECTORS
VERIE, C
AYAS, J
[J]. APPLIED PHYSICS LETTERS, 1967, 10 (09) : 241 - &