NONLOCAL PSEUDOPOTENTIALS FOR GE AND GAAS

被引:90
作者
PANDEY, KC
PHILLIPS, JC
机构
[1] COLUMBIA UNIV,DEPT PHYS,NEW YORK,NY 10027
[2] BELL TEL LABS INC,MURRAY HILL,NJ 07974
来源
PHYSICAL REVIEW B | 1974年 / 9卷 / 04期
关键词
D O I
10.1103/PhysRevB.9.1552
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:1552 / 1559
页数:8
相关论文
共 34 条
[1]   MODEL POTENTIAL FOR POSITIVE IONS [J].
ABARENKOV, IV ;
HEINE, V .
PHILOSOPHICAL MAGAZINE, 1965, 12 (117) :529-+
[2]   SCREENED MODEL POTENTIAL FOR 25 ELEMENTS [J].
ANIMALU, AOE ;
HEINE, V .
PHILOSOPHICAL MAGAZINE, 1965, 12 (120) :1249-&
[3]   E1 TRANSITION IN GE - 2-DIMENSIONAL OR 3-DIMENSIONAL [J].
ASPNES, DE ;
ROWE, JE .
PHYSICAL REVIEW B, 1973, 7 (02) :887-891
[4]   INTERBAND MASSES OF HIGHER INTERBAND CRITICAL-POINTS IN GE [J].
ASPNES, DE .
PHYSICAL REVIEW LETTERS, 1973, 31 (04) :230-233
[5]   LINEARIZED THIRD-DERIVATIVE SPECTROSCOPY WITH DEPLETION-BARRIER MODULATION [J].
ASPNES, DE .
PHYSICAL REVIEW LETTERS, 1972, 28 (14) :913-&
[6]   SCHOTTKY-BARRIER ELECTROREFLECTANCE-APPLICATION TO GAAS [J].
ASPNNES, DE ;
STUDNA, AA .
PHYSICAL REVIEW B, 1973, 7 (10) :4605-4652
[7]   REFLECTANCE AND PHOTOEMISSION FROM SI [J].
BRUST, D ;
PHILLIPS, JC ;
COHEN, ML .
PHYSICAL REVIEW LETTERS, 1962, 9 (09) :389-&
[8]   ELECTRONIC SPECTRA OF CRYSTALLINE GERMANIUM + SILICON [J].
BRUST, D .
PHYSICAL REVIEW A-GENERAL PHYSICS, 1964, 134 (5A) :1337-&
[9]  
Cardona M., 1969, SOLID STATE PHYS S11
[10]  
CHEKROUN CD, 1973, B AM PHYS SOC, V18, P322