ELECTRON MOBILITY AND IMPURITY CONCENTRATION IN N-GAP CRYSTALS GROWN BY SLOW COOLING OF GA SOLUTION

被引：45

作者：

TOYAMA, M

NAITO, M

KASAMI, A

机构：

来源：

关键词：

D O I：

10.1143/JJAP.8.358

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：358 / &

共 32 条

[1] CARRIER MOBILITY AND SHALLOW IMPURITY STATES IN ZNSE AND ZNTE
AVEN, M
SEGALL, B
[J]. PHYSICAL REVIEW, 1963, 130 (01): : 81 - +
[2] DIELECTRIC DISPERSION AND PHONON LINE SHAPE IN GALLIUM PHOSPHIDE
BARKER, AS
[J]. PHYSICAL REVIEW, 1968, 165 (03): : 917 - &
[3] BHARGAVA RN, 1968, B AM PHYS SOC, V13, P481
[4] INTERVALLEY-SCATTERING SELECTION RULES IN 3-V SEMICONDUCTORS
BIRMAN, JL
LAX, M
LOUDON, R
[J]. PHYSICAL REVIEW, 1966, 145 (02): : 620 - &
[5] Blatt F. J., 1957, SOLID STATE PHYS, V4, P344
[6] BLATT FJ, 1957, SOLID STATE PHYS, V4, P334
[7] HIGH-FIELD TRANSPORT IN N-TYPE GAAS
CONWELL, EM
VASSELL, MO
[J]. PHYSICAL REVIEW, 1968, 166 (03): : 797 - +
[8] FIELD DEPENDENCE OF MOBILITY IN (100) CONDUCTION BAND MINIMA OF GAAS
CONWELL, EM
[J]. PHYSICS LETTERS, 1966, 21 (04): : 368 - +
[9] ABSORPTION AND LUMINESCENCE OF EXCITONS AT NEUTRAL DONORS IN GALLIUM PHOSPHIDE
DEAN, PJ
[J]. PHYSICAL REVIEW, 1967, 157 (03): : 655 - &
[10] INTRINSIC ABSORPTION-EDGE SPECTRUM OF GALLIUM PHOSPHIDE
DEAN, PJ
THOMAS, DG
[J]. PHYSICAL REVIEW, 1966, 150 (02): : 690 - &