RESISTIVITY MEASUREMENT OF THIN SEMICONDUCTOR-FILMS ON METALLIC SUBSTRATES

被引:4
作者
HOGAN, S [1 ]
WAGNER, S [1 ]
BARNES, FS [1 ]
机构
[1] UNIV COLORADO,DEPT ELECT ENGN,BOULDER,CO 80309
关键词
D O I
10.1063/1.90899
中图分类号
O59 [应用物理学];
学科分类号
摘要
The resistivity of thin polycrystalline films of cadmium deposited on brass substrates has been measured by a microwave technique. The samples, of the type employed in solar-cell research, form the plane reflector of a semiconfocal Fabry-Perot millimeter-wave interferometer. The resistivity is derived by field-pertubation analysis as a simple function of the quality factors for the cavity with and without the semiconductor layer, respectively. Results are in excellent agreement with those of current-voltage measurements on samples with metallic contacts.
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收藏
页码:77 / 78
页数:2
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