COMPUTER-SIMULATIONS OF EXCESS ELECTRON-TRANSPORT IN NEON

被引：10

作者：

ANCILOTTO, F

TOIGO, F

机构：

[1] Dipartimento di Fisica G. Galilei, I-35131 Padova

来源：

PHYSICAL REVIEW A | 1992年 / 45卷 / 06期

关键词：

D O I：

10.1103/PhysRevA.45.4015

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

The behavior of excess electrons in neon gas in a wide range of densities is investigated using molecular-dynamics simulations with a parameter-free interparticle potential. A realistic pseudopotential reproducing the measured electron-Ne low-energy scattering properties is used. A transition from quasi-free behavior to a localized regime where the electron is trapped in a bubblelike cavity is observed as the density is increased beyond a value that is close to the experimental one. The calculated electron mobilities in a wide range of densities are also found to be in reasonable agreement with the experimental data.

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页码：4015 / 4022

页数：8

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