OUTDIFFUSION AS A TECHNIQUE FOR THE PRODUCTION OF DIODES AND TRANSISTORS

被引：10

作者：

HALPERN, J

REDIKER, RH

机构：

来源：

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS | 1958年 / 46卷 / 06期

关键词：

D O I：

10.1109/JRPROC.1958.286845

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1068 / 1076

页数：9

共 18 条

[1]

CARSLAW HG, 1947, CONDUCTION HEAT SOLI, P54

[2]

GARRETA O, 1955, CR HEBD ACAD SCI, V241, P857

[3] SWITCHING TIME IN JUNCTION DIODES AND JUNCTION TRANSISTORS [J].

KINGSTON, RH .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1954, 42 (05) :829-834

[4]

KROMER H, 1953, NATURWISSENSCHAFTEN, V40, P578

[5]

KROMER H, 1954, AEU-ARCH ELEKTRON UB, V8, P499

[6]

KROMER H, 1954, AEU-ARCH ELEKTRON UB, V8, P363

[7]

KROMER H, 1954, AEU-ARCH ELEKTRON UB, V8, P223

[8]

LATHROP JW, 1957, NOV IRE PGED M WASH

[9] TRANSIENT RESPONSE OF A P-N JUNCTION [J].

LAX, B ;

NEUSTADTER, SF .

[10] A HIGH-FREQUENCY DIFFUSED BASE GERMANIUM TRANSISTOR [J].

LEE, CA .

BELL SYSTEM TECHNICAL JOURNAL, 1956, 35 (01) :23-34