CARRIER RELAXATION IN INGAAS HETEROSTRUCTURES

被引:9
作者
SUCHA, G
BOLTON, SR
CHEMLA, DS
SIVCO, DL
CHO, AY
机构
[1] LAWRENCE BERKELEY LAB,DIV MAT SCI,BERKELEY,CA 94720
[2] AT&T BELL LABS,MURRAY HILL,NJ 07974
关键词
D O I
10.1063/1.112020
中图分类号
O59 [应用物理学];
学科分类号
摘要
We present time-resolved measurements of carrier dynamics in bulk and quantum wells InGaAs, using differential absorption spectroscopy. We find that the carrier thermalization time is 200-300 fs regardless of layer width for sample thickness ranging from 100 to 6000 angstrom. The efficiency of screening relative to phase space filling is larger in the bulk than in the quantum wells.
引用
收藏
页码:1486 / 1488
页数:3
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