HIGH-FREQUENCY NEGATIVE-RESISTANCE CIRCUIT PRINCIPLES FOR ESAKI DIODE APPLICATIONS

被引：92

作者：

HINES, ME

机构：

来源：

BELL SYSTEM TECHNICAL JOURNAL | 1960年 / 39卷 / 03期

关键词：

D O I：

10.1002/j.1538-7305.1960.tb03933.x

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：477 / 513

页数：37

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[5] HALL RN, 1959, OCT IRE PROF GROUP E
[6] HINES ME, 1960, P IRE, V48, P789
[7] DIRECT OBSERVATION OF PHONONS DURING TUNNELING IN NARROW JUNCTION DIODES
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[8] A 3000-MC LUMPED-PARAMETER OSCILLATOR USING AN ESAKI NEGATIVE-RESISTANCE DIODE
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[J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1959, 3 (04) : 372 - 374
[9] SEIDEL H, 1959, IRE WESCON CONV RE 2, P83
[10] TUNNEL DIODES AS HIGH-FREQUENCY DEVICES
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[J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1959, 47 (07): : 1201 - 1206