THE NATURE OF INTERFACE STATES GENERATED BY HIGH-FIELD INJECTION

被引：3

作者：

VUILLAUME, D

机构：

[1] Institut d'Electronique et de Microélectronique du Nord (IEMN), UMR 9929, C.N.R.S., 59046 LILLE cedex

来源：

MICROELECTRONIC ENGINEERING | 1993年 / 22卷 / 1-4期

关键词：

D O I：

10.1016/0167-9317(93)90157-Z

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The main electrical properties of interface defects induced by high field injection into the oxide are reviewed. The relevance of these data will be discussed, and the weakness or the strength of the relationship between these electrical data and the microscopic nature of the defect will be pointed out. These results are discussed aiming at determining whether the defects induced by high field injections are similar to the P(b) center or not.

引用

页码：201 / 206

页数：6

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