CATHODOLUMINESCENCE IMAGING OF SEMICONDUCTING DIAMOND FORMED BY PLASMA CVD

被引:9
作者
YOKOTA, Y [1 ]
KAWARADA, H [1 ]
MA, JS [1 ]
NISHIMURA, K [1 ]
HIRAKI, A [1 ]
机构
[1] OSAKA DIAMOND IND CO,SAKAI,OSAKA 593,JAPAN
关键词
D O I
10.1016/0022-0248(90)90171-G
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
Boron-doped p-type semiconducting diamond formed by plasma-assisted chemical vapor deposition (CVD) shows the same blue cathodoluminescence (CL), having a peak at 2.8-2.9 eV, as that of natiural semiconducting diamond classified as type IIb. In natural type IIb diamond (semiconducting) and in natural type IIa diamond (insulating), dislocations are luminescent regions. In single crystal polyhedrons of CVD diamond it has been observed that the luminescent regions are located at {100} growth sectors, but few are found at {111} sectors. This feature can be explained by the difference in the introduction of crystal defects between the {100} and {111} sectors. This phenomenon in CVD diamond has been discussed in comparison with natural type IIb diamond. © 1990.
引用
收藏
页码:65 / 70
页数:6
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