PREPARATION OF LANTHANIDE SULFIDE FILMS BY CHEMICAL VAPOR-DEPOSITION USING BETA-DIKETONE CHELATES

被引：8

作者：

AMANO, R ^{[1
]}

SHIOKAWA, Y ^{[1
]}

机构：

[1] TOHOKU UNIV,INST MAT RES,AOBA KU,SENDAI,MIYAGI 980,JAPAN

来源：

JOURNAL OF RADIOANALYTICAL AND NUCLEAR CHEMISTRY-LETTERS | 1991年 / 155卷 / 03期

关键词：

D O I：

10.1007/BF02166645

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

Preparation of thin films of lanthanide (Ln) sulfides has been studied by the chemical vapor deposition (CVD) method, using metal beta-diketonato chelates with 2,2,6,6-tetramethyl-1-3, 5-heptanedione and reactant H2S gas as starting materials. Two kinds of sulfides, Ln2O2S oxysulfides and EuS monosulfide, were obtained as thin films at temperatures as low as 390-570-degrees-C. The CVD method was confirmed to be suited for the above purpose.

引用

页码：201 / 210

页数：10