MISFIT DISLOCATION FORMATION AND INTERACTION IN GE(SI) ON SI (001)

被引：5

作者：

ALBRECHT, M ^{[1
]}

STRUNK, HP ^{[1
]}

HANSSON, PO ^{[1
]}

BAUSER, E ^{[1
]}

机构：

[1] MAX PLANCK INST FESTKORPERFORSCH, W-7000 STUTTGART 80, GERMANY

来源：

JOURNAL OF CRYSTAL GROWTH | 1993年 / 128卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(93)90342-T

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The misfit dislocation network that is present in the system of Ge on Si(001) after growth by liquid phase epitaxy from Bi solution is investigated by transmission electron microscopy (TEM). After a summary of the dislocation processes that occur in the growth islands during Stranski-Krastanov growth, the processes in the stage of coalescence to a continuous epitaxial layer are described.

引用

页码：327 / 330

页数：4

共 8 条

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