LIGHT-INDUCED PHOTOLUMINESCENCE FATIGUE IN A-SI-H

被引：7

作者：

HAN, DX

YOSHIDA, M

MORIGAKI, K

机构：

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1987年 / 97-8卷

关键词：

D O I：

10.1016/0022-3093(87)90153-0

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：651 / 654

页数：4

共 9 条

[1]

HAN D, IN PRESS SOLID STATE

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MORIGAKI, K ;

YOSHIDA, M .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1985, 52 (03) :289-298

[3]

Morigaki K., 1987, Disordered semiconductors, P415

[4] FATIGUE EFFECT IN LUMINESCENCE OF GLOW-DISCHARGE AMORPHOUS-SILICON AT LOW-TEMPERATURES [J].

MORIGAKI, K ;

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[5]

MORIGAKI K, 1984, SEMICONDUCTORS SEM C, V21

[6] LIGHT-INDUCED RADIATIVE RECOMBINATION CENTERS IN HYDROGENATED AMORPHOUS SILICON [J].

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BERKEYHEISER, JE .

APPLIED PHYSICS LETTERS, 1980, 37 (08) :705-706

[7] GAP STATES AND RECOMBINATION PROCESSES IN ONE-DIMENSIONALLY ORDERED AND DISORDERED A-SI-H/A-SI1-XNX-H MULTILAYER FILMS [J].

YAMAGUCHI, M ;

OHTA, H ;

OGIHARA, C ;

YOKOMICHI, H ;

MORIGAKI, K ;

NONOMURA, S ;

NITTA, S .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1987, 97-8 :931-934

[8] NITROGEN-RELATED DEFECTS AND THEIR ROLE IN THE PHOTOINDUCED PHENOMENA IN A-SI1-XNX-H [J].

YAMAGUCHI, M ;

MORIGAKI, K ;

YOSHIDA, M ;

NITTA, S .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1985, 77-8 :921-924

[9]

YAMAGUCHI M, IN PRESS

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