BEHAVIOUR OF A LOW-NOISE MICROWAVE FET AT LOW TEMPERATURE

被引:8
作者
LORIOU, B
BELLEC, M
LEROUZIC, M
机构
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D O I
10.1049/el:19700566
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
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页码:819 / &
相关论文
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[3]   GATE CURRENTS OF JUNCTION FIELD-EFFECT TRANSISTORS AT LOW TEMPERATURES [J].
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PROCEEDINGS OF THE IEEE, 1969, 57 (06) :1225-+
[4]  
WHITTAM M, 1969, CRYOGENICS, V10, P388