VISIBLE-LIGHT EMISSION FROM QUANTIZED PLANAR GE STRUCTURES

被引:18
作者
VENKATASUBRAMANIAN, R
MALTA, DP
TIMMONS, ML
HUTCHBY, JA
机构
关键词
D O I
10.1063/1.106269
中图分类号
O59 [应用物理学];
学科分类号
摘要
Visible photoluminescence has been observed near 1.9 eV at 300 K from quantized planar Ge structures. This is the first observation of luminescence in Ge and is similar to the recently reported luminescence from porous Si. The quantum structures are prepared from bulk Ge substrates, and both n- and p-type Ge produce luminescence at room temperature. These structures are fabricated by plasma-assisted etching using a CF4/O2 gas mixture.
引用
收藏
页码:1603 / 1605
页数:3
相关论文
共 7 条
[1]   SILICON QUANTUM WIRE ARRAY FABRICATION BY ELECTROCHEMICAL AND CHEMICAL DISSOLUTION OF WAFERS [J].
CANHAM, LT .
APPLIED PHYSICS LETTERS, 1990, 57 (10) :1046-1048
[2]   QUANTUM SIZE EFFECTS ON THE OPTICAL BAND-GAP OF MICROCRYSTALLINE SI-H [J].
FURUKAWA, S ;
MIYASATO, T .
PHYSICAL REVIEW B, 1988, 38 (08) :5726-5729
[3]   OPTICAL STUDIES OF THE STRUCTURE OF POROUS SILICON FILMS FORMED IN P-TYPE DEGENERATE AND NON-DEGENERATE SILICON [J].
PICKERING, C ;
BEALE, MIJ ;
ROBBINS, DJ ;
PEARSON, PJ ;
GREEF, R .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1984, 17 (35) :6535-6552
[4]   QUANTUM SIZE EFFECTS ON PHOTOLUMINESCENCE IN ULTRAFINE SI PARTICLES [J].
TAKAGI, H ;
OGAWA, H ;
YAMAZAKI, Y ;
ISHIZAKI, A ;
NAKAGIRI, T .
APPLIED PHYSICS LETTERS, 1990, 56 (24) :2379-2380
[5]  
TIMMONS ML, 1990, 21 IEEE PHOT SPEC C, P68
[6]  
VENKATASUBRAMAN.R, IN PRESS APPL PHYS L
[7]  
VENKATASUBRAMAN.R, 1991, IN PRESS 22ND IEEE P