RAMAN CHARACTERIZATION OF DIAMOND AND CARBON-FILMS GROWN BY REMOTE MICROWAVE PLASMA ENHANCED CVD

被引：26

作者：

MERMOUX, M ^{[1
]}

ROY, F ^{[1
]}

MARCUS, B ^{[1
]}

ABELLO, L ^{[1
]}

LUCAZEAU, G ^{[1
]}

机构：

[1] ECOLE NATL SUPER ELECTROCHIM & ELECTROMET GRENOBLE, INST NATL POLYTECH GRENOBLE, F-38402 ST MARTIN DHERES, FRANCE

来源：

关键词：

D O I：

10.1016/0925-9635(92)90156-I

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We present the Raman characterization of carbon films prepared on (100) silicon substrates by remote microwave plasma enhanced CVD in a gaseous mixture of CH4 in H2. The set of samples was obtained by varying the methane concentration from 0.5 to 5.0% for different substrate temperatures ranging from 600 °C to 1000 °C. The following conclusions were obtained: 1. (i) For a given methane concentration, the substrate temperature range leading to diamond formation is very narrow. 2. (ii) The average temperature of diamond formation decreases when the methane concentration increases. © 1992.

引用

页码：519 / 524

页数：6

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