TRAPPING LEVELS IN ANTHRACENE CRYSTALS BY THERMALLY STIMULATED CURRENTS

被引：11

作者：

GAROFANO, T ^{[1
]}

MORELLI, S ^{[1
]}

机构：

[1] UNIV MODENA,IST FIS,MODENA,ITALY

来源：

NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA B-GENERAL PHYSICS RELATIVITY ASTRONOMY AND MATHEMATICAL PHYSICS AND METHODS | 1973年 / B 13卷 / 01期

关键词：

D O I：

10.1007/BF02726703

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：174 / 184

页数：11

共 27 条

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[5] CALCULATION OF ELECTRON TRAP DEPTHS FROM THERMOLUMINESCENCE MAXIMA
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[6] 2. CORRELATIONS BETWEEN THERMOLUMINESCENCE AND THERMALLY STIMULATED CONDUCTIVITY
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[8] DETERMINATION OF ELECTRON TRAPPING PARAMETERS
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[J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (01) : 21 - &
[9] BUBE RH, 1967, PHOTOCONDUCTIVITY SO, P292
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