DEPOSITION OF OXIDE FILMS BY REACTIVE EVAPORATION

[1] AUWARTER M, 1960, Patent No. 2920002

[2] IMPROVED DIELECTRIC FILMS FOR MULTILAYER COATINGS AND MIRROR PROTECTION [J]. JOURNAL DE PHYSIQUE, 1964, 25 (1-2): : 250 - 254

[3] CREMER E, 1958, Z ELEKTROCHEM, V62, P939

[4] FILMED SURFACES FOR REFLECTING OPTICS [J]. JOURNAL OF THE OPTICAL SOCIETY OF AMERICA, 1955, 45 (11) : 945 - 952

[5] OPTICAL PROPERTIES OF SILICON MONOXIDE IN THE WAVELENGTH REGION FROM 0.24 TO 14.0 MICRONS [J]. JOURNAL OF THE OPTICAL SOCIETY OF AMERICA, 1954, 44 (03) : 181 - 187

[6] PREPARATION, STRUCTURE, AND APPLICATIONS OF THIN FILMS OF SILICON MONOXIDE AND TITANIUM DIOXIDE [J]. JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1950, 33 (12) : 353 - 360

[7] IDZAK EF, 1963, OPT SPECTROSC, V15, P54

[8] VAPOR-DEPOSITED SUPERCONDUCTIVE FILMS OF NB, TA, + V [J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (3P1) : 547 - &

[9] PULKER H, 1961, THESIS U INNSBRUCK

[10] CRITICAL TEMPERATURE OF NIOBIUM + TENTALUM FILMS [J]. PROCEEDINGS OF THE IEEE, 1964, 52 (10) : 1234 - +

[1] AUWARTER M, 1960, Patent No. 2920002

[2] IMPROVED DIELECTRIC FILMS FOR MULTILAYER COATINGS AND MIRROR PROTECTION [J]. JOURNAL DE PHYSIQUE, 1964, 25 (1-2): : 250 - 254

[3] CREMER E, 1958, Z ELEKTROCHEM, V62, P939

[4] FILMED SURFACES FOR REFLECTING OPTICS [J]. JOURNAL OF THE OPTICAL SOCIETY OF AMERICA, 1955, 45 (11) : 945 - 952

[5] OPTICAL PROPERTIES OF SILICON MONOXIDE IN THE WAVELENGTH REGION FROM 0.24 TO 14.0 MICRONS [J]. JOURNAL OF THE OPTICAL SOCIETY OF AMERICA, 1954, 44 (03) : 181 - 187

[6] PREPARATION, STRUCTURE, AND APPLICATIONS OF THIN FILMS OF SILICON MONOXIDE AND TITANIUM DIOXIDE [J]. JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1950, 33 (12) : 353 - 360

[7] IDZAK EF, 1963, OPT SPECTROSC, V15, P54

[8] VAPOR-DEPOSITED SUPERCONDUCTIVE FILMS OF NB, TA, + V [J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (3P1) : 547 - &

[9] PULKER H, 1961, THESIS U INNSBRUCK

[10] CRITICAL TEMPERATURE OF NIOBIUM + TENTALUM FILMS [J]. PROCEEDINGS OF THE IEEE, 1964, 52 (10) : 1234 - +