OBSERVATION OF THE DOUBLE-STEP SINGLE-STEP TRANSITION ON A VICINAL SURFACE OF SI(100)

被引：17

作者：

BARBIER, L ^{[1
]}

KHATER, A ^{[1
]}

SALANON, B ^{[1
]}

LAPUJOULADE, J ^{[1
]}

机构：

[1] UNIV MAINE,PHYS MAT LAB,F-72017 LE MANS,FRANCE

来源：

PHYSICAL REVIEW B | 1991年 / 43卷 / 18期

关键词：

D O I：

10.1103/PhysRevB.43.14730

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The vicinal Si(100) faces have a reconstruction with double or single steps, depending on the miscut of the surface. In our He-atom-scattering experiment, the reconstruction of the Si(1117) face is investigated versus temperature. The miscut (4.76-degrees) is chosen in such a manner that it is above the threshold where the double steps are always formed. A strong structural modification is observed at high temperatures (above 800 K), and is interpreted as the appearance of the single-step reconstruction. Recent theoretical models predicting the transition are considered and a calculation is done on this basis using recently published experimental values of the energy of kinks on steps.

引用

页码：14730 / 14733

页数：4

共 12 条

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