ELECTROABSORPTION AND LIGHT-MODULATION WITH ZNSE/ZNSSE MULTIQUANTUM WELLS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY

被引：28

作者：

MARQUARDT, E

OPITZ, B

SCHOLL, M

HEUKEN, M

机构：

[1] Institut für Halbleitertechnik, RWTH Aachen, 52056 Aachen

来源：

JOURNAL OF APPLIED PHYSICS | 1994年 / 75卷 / 12期

关键词：

D O I：

10.1063/1.356541

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

ZnSe/ZnSSe multi-quantum wells were grown on GaAs by metalorganic vapor phase epitaxy and investigated by photocurrent and photoluminescence measurements. Photocurrent spectra show clear excitonic peaks. The observed peaks were identified as light and heavy hole excitonic transitions by comparing the data to theoretical ones. Field dependent photocurrent measurements show features useable for modulator applications in the blue spectral range at energies above 2.7 eV at 300 K.

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页码：8022 / 8026

页数：5

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