HIGH-VOLTAGE 4H-SIC SCHOTTKY-BARRIER DIODES

被引：92

作者：

RAGHUNATHAN, R

ALOK, D

BALIGA, BJ

机构：

[1] Power Semiconductor Research Center, North Carolina State University

来源：

IEEE ELECTRON DEVICE LETTERS | 1995年 / 16卷 / 06期

关键词：

D O I：

10.1109/55.790716

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Characteristics of 4H-SiC Schottky barrier diodes with breakdown voltages upto 1000 V are reported for the first time. The diodes showed excellent forward I-V characteristics, with a forward voltage drop of 1.06 V at an on-state current density of 100 A/cm(2). The specific on-resistance for these diodes was found to be low(2 x 10(-3) Omega-cm(2) at room temperature) and showed a T-1.6 variation with temperature; Titanium Schottky barrier height was determined to be 0.99 eV independent of the temperature, The breakdown voltage of the diodes was found to decrease with temperature.

引用

页码：226 / 227

页数：2

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