DETERMINATION OF FREE ELECTRON EFFECTIVE MASS OF N-TYPE SILICON

被引：57

作者：

HOWARTH, LE

GILBERT, JF

机构：

来源：

关键词：

D O I：

10.1063/1.1729078

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：236 / &

共 6 条

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DEXTER, RN
ZEIGER, HJ
LAX, B
[J]. PHYSICAL REVIEW, 1956, 104 (03): : 637 - 644
[3] Paul W, 1960, HELV PHYS ACTA, V33, P329
[4] MAGNETIC PROPERTIES OF N-TYPE SILICON
SONDER, E
STEVENS, DK
[J]. PHYSICAL REVIEW, 1958, 110 (05): : 1027 - 1034
[5] PROPERTIES OF HEAVILY DOPED N-TYPE GERMANIUM
SPITZER, WG
TRUMBORE, FA
LOGAN, RA
[J]. JOURNAL OF APPLIED PHYSICS, 1961, 32 (10) : 1822 - &
[6] DETERMINATION OF OPTICAL CONSTANTS AND CARRIER EFFECTIVE MASS OF SEMICONDUCTORS
SPITZER, WG
FAN, HY
[J]. PHYSICAL REVIEW, 1957, 106 (05): : 882 - 890