MANY-BODY EFFECTS IN SUBBAND STRUCTURE OF SI-MOS INVERSION LAYER

被引:12
作者
NAKAMURA, K
WATANABE, K
EZAWA, H
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D O I
10.1016/0039-6028(78)90501-0
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
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页码:258 / 265
页数:8
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