IMPURITY BAND CONDUCTION IN PHOSPHORUS DOPED SILICON

[1] BENOIT C, 1965, PHYS STATUS SOLIDI, V11, P295

[2] BIONDI FJ, 1958, TRANSISTOR TECHNOLOG

[3] BLAGOSKLONSKAYA LE, 1970, FIZ TVERD TELA+, V11, P2402

[4] BONCH-BRUEVICH VL, 1968, SOV PHYS SEMICOND+, V2, P299

[5] BONCHBRUEVITCH VL, 1963, SOVIET PHYS OPTICS S, V14, P264

[6] BONCHBRUEVITCH VL, ELECTRONIC THEORY HE

[7] BROOKS H, 1955, ADVANCES ELECTRONIC, V5, P87

[8] ELECTRICAL PROPERTIES OF N-TYPE GERMANIUM [J]. PHYSICAL REVIEW, 1954, 93 (04): : 693 - 706

[9] NEUTRAL IMPURITY SCATTERING IN SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1950, 79 (06): : 1013 - 1014

[10] A RAPIDLY CONVERGENT DESCENT METHOD FOR MINIMIZATION [J]. COMPUTER JOURNAL, 1963, 6 (02) : 163 - &

[1] BENOIT C, 1965, PHYS STATUS SOLIDI, V11, P295

[2] BIONDI FJ, 1958, TRANSISTOR TECHNOLOG

[3] BLAGOSKLONSKAYA LE, 1970, FIZ TVERD TELA+, V11, P2402

[4] BONCH-BRUEVICH VL, 1968, SOV PHYS SEMICOND+, V2, P299

[5] BONCHBRUEVITCH VL, 1963, SOVIET PHYS OPTICS S, V14, P264

[6] BONCHBRUEVITCH VL, ELECTRONIC THEORY HE

[7] BROOKS H, 1955, ADVANCES ELECTRONIC, V5, P87

[8] ELECTRICAL PROPERTIES OF N-TYPE GERMANIUM [J]. PHYSICAL REVIEW, 1954, 93 (04): : 693 - 706

[9] NEUTRAL IMPURITY SCATTERING IN SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1950, 79 (06): : 1013 - 1014

[10] A RAPIDLY CONVERGENT DESCENT METHOD FOR MINIMIZATION [J]. COMPUTER JOURNAL, 1963, 6 (02) : 163 - &