WAVELENGTH DEPENDENCE OF THE OPTICAL CONTROL OF A HEMT OSCILLATOR

被引:1
作者
ROMERO, MA
BANGERT, A
ZHANG, X
HERCZFELD, PR
机构
[1] Center for Microwave/Lightwave Engineering Drexel University Philadelphia, Pennsylvania
[2] Fraunhofer Institute for Applied Solid State Physics, Freiburg
[3] Center for Microwave/Lightwave Engineering Drexel University Philadelphia, Pennsylvania
关键词
OPTICAL-MICROWAVE INTERACTIONS; HEMTS; HETEROSTRUCTURES; OSCILLATORS; PHOTOCONDUCTIVITY;
D O I
10.1002/mop.4650050112
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The direct optical control, tuning, FM modulation, and injection locking of a 2-GHz HEMT oscillator using a semiconductor laser (lambda = 0.85-mu-m) is reported. An optical tuning range of 4.3 MHz and an optical injection locking range of more than 0.55 MHz at fundamental frequency were achieved. For the first time an experimental study relating the photoresponse mechanisms in the HEMT to the wavelength of the incident light is presented. It is shown that for the 0.85-mu-m-wavelength illumination the photoconductive effect dominates the optical response of the device, while for 0.633-mu-m illumination the photovoltaic effect prevails [1]. The photoconductive mechanism, which is smaller but faster, is more suitable for high frequency applications such as direct optical injection locking.
引用
收藏
页码:38 / 41
页数:4
相关论文
共 4 条
[1]  
Romero M.A., Cunha A.L.A., de Salles A.A., (1991)
[2]  
Seeds A.J., de Salles A.A., Optical Control of Microwave Semiconductor Devices, IEEE Trans. Microwave Theory Tech., 38 MTT, 5, pp. 577-585, (1990)
[3]  
Simons R.N., Microwave Performance of an Optically Controlled AlGaAs/GaAs High Electron Mobility Transistor and GaAs MESFET, IEEE Transactions on Microwave Theory and Techniques, 35, 12, pp. 1444-1455, (1987)
[4]  
Bangert A., Ludwig M., A Direct Optical Injection Locked 8 GHz MMIC Oscillator, (1991)