EPITAXIAL-GROWTH AND ENHANCED SATURATION MAGNETIZATION OF SINGLE-CRYSTAL CO1-XCRX MEDIA SUITABLE FOR PERPENDICULAR MAGNETIC RECORDING

被引:21
作者
KRISHNAN, KM
TAKEUCHI, T
HIRAYAMA, Y
FUTAMOTO, M
机构
[1] University of California, Lawrence Berkeley Laboratory, Materials Sciences Division, Central Research Laboratory, Hitachi Ltd., Berkeley, CA, 94720, Kokubunji
[2] Central Research Laboratory, Hitachi Ltd., Kokubunji
关键词
D O I
10.1109/20.334302
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Highly c-axis oriented, single crystal films of Co1-xCrs have been grown epitaxially on mica substrates by e-beam evaporation. The method, using a Ru underlayer, is simple and applicable to similar c-axis oriented, large area growth of the wide range of Co alloys suitable for perpendicular recording. The films show narrow peak widths in X-ray diffraction (Delta theta((00.2)) similar to 1.0-1.50) and their magnetic properties are composition dependent. Moreover, for any given Cr concentration, these single crystal films exhibit the largest saturation magnetization when compared with either sputtered/evaporated samples or films grown under identical conditions on glass/silicon substrates. It is shown that this enhanced M(s) is directly correlated with the dispersion of the c-axis about the film normal and their narrowest values are observed for these epitaxially grown films. X-ray microanalysis shows some inter/intra-granular variation in Cr content, but systematic segregation trends appropriate for explaining these results have not yet been observed.
引用
收藏
页码:5115 / 5120
页数:6
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