共 47 条
- [2] PHOTOREFLECTANCE STUDY OF HG0.7CD0.3 TE AND CD1-XZNX TE - E1 TRANSITION [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (04): : 2028 - 2033
- [3] Aspnes D. E., 1980, Handbook on semiconductors, vol.II. Optical properties of solids, P109
- [4] ELECTRIC-FIELD EFFECTS ON OPTICAL ABSORPTION NEAR THRESHOLDS IN SOLIDS [J]. PHYSICAL REVIEW, 1966, 147 (02): : 554 - &
- [5] SCHOTTKY-BARRIER ELECTROREFLECTANCE-APPLICATION TO GAAS [J]. PHYSICAL REVIEW B, 1973, 7 (10): : 4605 - 4652
- [7] BHATTACHARYA R, 1987, 1987 P SOC PHOT OPT, V794, P81
- [8] PHOTOREFLECTANCE CHARACTERIZATION OF THE SPACE-CHARGE REGION IN SEMICONDUCTORS - INDIUM TIN OXIDE ON INP AS A MODEL SYSTEM [J]. SOLAR CELLS, 1987, 21 : 371 - 377
- [9] Cardona M., 1969, MODULATION SPECTROSC
- [10] EFFECTS OF UNIAXIAL STRESS ON ELECTROREFLECTANCE SPECTRUM OF GE AND GAAS [J]. PHYSICAL REVIEW B, 1977, 15 (04): : 2127 - 2144