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ELECTRICAL AND PHOTOVOLTAIC PROPERTIES OF CDS-SI JUNCTIONS
被引:26
作者
:
OKIMURA, H
论文数:
0
引用数:
0
h-index:
0
OKIMURA, H
KONDO, R
论文数:
0
引用数:
0
h-index:
0
KONDO, R
机构
:
来源
:
JAPANESE JOURNAL OF APPLIED PHYSICS
|
1970年
/ 9卷
/ 03期
关键词
:
D O I
:
10.1143/JJAP.9.274
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:274 / &
相关论文
共 11 条
[1]
EXPERIMENTS ON GE-GAAS HETEROJUNCTIONS
[J].
ANDERSON, RL
论文数:
0
引用数:
0
h-index:
0
ANDERSON, RL
.
SOLID-STATE ELECTRONICS,
1962,
5
(SEP-O)
:341
-&
[2]
EPITAXIAL GROWTH AND PROPERTIES OF ZNTE-CDS HETEROJUNCTIONS
[J].
AVEN, M
论文数:
0
引用数:
0
h-index:
0
AVEN, M
;
GARWACKI, W
论文数:
0
引用数:
0
h-index:
0
GARWACKI, W
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1963,
110
(05)
:401
-407
[3]
CDTE SOLAR CELLS AND PHOTOVOLTAIC HETEROJUNCTIONS IN II-VI COMPOUNDS
[J].
CUSANO, DA
论文数:
0
引用数:
0
h-index:
0
CUSANO, DA
.
SOLID-STATE ELECTRONICS,
1963,
6
(03)
:217
-232
[4]
PHOTOVOLTAIC RESPONSE OF NGE-NSI HETERODIODES
[J].
DONNELLY, JP
论文数:
0
引用数:
0
h-index:
0
DONNELLY, JP
;
MILNES, AG
论文数:
0
引用数:
0
h-index:
0
MILNES, AG
.
SOLID-STATE ELECTRONICS,
1966,
9
(02)
:174
-&
[5]
FUNDAMENTAL ABSORPTION EDGE IN CADMIUM SULFIDE
[J].
DUTTON, D
论文数:
0
引用数:
0
h-index:
0
DUTTON, D
.
PHYSICAL REVIEW,
1958,
112
(03)
:785
-792
[6]
THIN FILM CDS-CDTE HETEROJUNCTION DIODES
[J].
DUTTON, RW
论文数:
0
引用数:
0
h-index:
0
DUTTON, RW
;
MULLER, RS
论文数:
0
引用数:
0
h-index:
0
MULLER, RS
.
SOLID-STATE ELECTRONICS,
1968,
11
(08)
:749
-&
[7]
GOODMANN AM, 1964, J APPL PHYS, V35, P503
[8]
METAL-SEMICONDUCTOR SURFACE BARRIERS
[J].
MEAD, CA
论文数:
0
引用数:
0
h-index:
0
MEAD, CA
.
SOLID-STATE ELECTRONICS,
1966,
9
(11-1)
:1023
-&
[9]
VAPOR-DEPOSITED THIN-FILM HETEROJUNCTION DIODES
[J].
MULLER, RS
论文数:
0
引用数:
0
h-index:
0
MULLER, RS
;
ZULEEG, R
论文数:
0
引用数:
0
h-index:
0
ZULEEG, R
.
JOURNAL OF APPLIED PHYSICS,
1964,
35
(05)
:1550
-+
[10]
PHOTOVALTAIC PROPERTIES OF CDS-P.SI HETEROJUNCTION CELLS
[J].
OKIMURA, H
论文数:
0
引用数:
0
h-index:
0
OKIMURA, H
;
KAWAKAMI, M
论文数:
0
引用数:
0
h-index:
0
KAWAKAMI, M
;
SAKAI, Y
论文数:
0
引用数:
0
h-index:
0
SAKAI, Y
.
JAPANESE JOURNAL OF APPLIED PHYSICS,
1967,
6
(07)
:908
-&
←
1
2
→
共 11 条
[1]
EXPERIMENTS ON GE-GAAS HETEROJUNCTIONS
[J].
ANDERSON, RL
论文数:
0
引用数:
0
h-index:
0
ANDERSON, RL
.
SOLID-STATE ELECTRONICS,
1962,
5
(SEP-O)
:341
-&
[2]
EPITAXIAL GROWTH AND PROPERTIES OF ZNTE-CDS HETEROJUNCTIONS
[J].
AVEN, M
论文数:
0
引用数:
0
h-index:
0
AVEN, M
;
GARWACKI, W
论文数:
0
引用数:
0
h-index:
0
GARWACKI, W
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1963,
110
(05)
:401
-407
[3]
CDTE SOLAR CELLS AND PHOTOVOLTAIC HETEROJUNCTIONS IN II-VI COMPOUNDS
[J].
CUSANO, DA
论文数:
0
引用数:
0
h-index:
0
CUSANO, DA
.
SOLID-STATE ELECTRONICS,
1963,
6
(03)
:217
-232
[4]
PHOTOVOLTAIC RESPONSE OF NGE-NSI HETERODIODES
[J].
DONNELLY, JP
论文数:
0
引用数:
0
h-index:
0
DONNELLY, JP
;
MILNES, AG
论文数:
0
引用数:
0
h-index:
0
MILNES, AG
.
SOLID-STATE ELECTRONICS,
1966,
9
(02)
:174
-&
[5]
FUNDAMENTAL ABSORPTION EDGE IN CADMIUM SULFIDE
[J].
DUTTON, D
论文数:
0
引用数:
0
h-index:
0
DUTTON, D
.
PHYSICAL REVIEW,
1958,
112
(03)
:785
-792
[6]
THIN FILM CDS-CDTE HETEROJUNCTION DIODES
[J].
DUTTON, RW
论文数:
0
引用数:
0
h-index:
0
DUTTON, RW
;
MULLER, RS
论文数:
0
引用数:
0
h-index:
0
MULLER, RS
.
SOLID-STATE ELECTRONICS,
1968,
11
(08)
:749
-&
[7]
GOODMANN AM, 1964, J APPL PHYS, V35, P503
[8]
METAL-SEMICONDUCTOR SURFACE BARRIERS
[J].
MEAD, CA
论文数:
0
引用数:
0
h-index:
0
MEAD, CA
.
SOLID-STATE ELECTRONICS,
1966,
9
(11-1)
:1023
-&
[9]
VAPOR-DEPOSITED THIN-FILM HETEROJUNCTION DIODES
[J].
MULLER, RS
论文数:
0
引用数:
0
h-index:
0
MULLER, RS
;
ZULEEG, R
论文数:
0
引用数:
0
h-index:
0
ZULEEG, R
.
JOURNAL OF APPLIED PHYSICS,
1964,
35
(05)
:1550
-+
[10]
PHOTOVALTAIC PROPERTIES OF CDS-P.SI HETEROJUNCTION CELLS
[J].
OKIMURA, H
论文数:
0
引用数:
0
h-index:
0
OKIMURA, H
;
KAWAKAMI, M
论文数:
0
引用数:
0
h-index:
0
KAWAKAMI, M
;
SAKAI, Y
论文数:
0
引用数:
0
h-index:
0
SAKAI, Y
.
JAPANESE JOURNAL OF APPLIED PHYSICS,
1967,
6
(07)
:908
-&
←
1
2
→