STATISTICAL EQUIPMENT MODELING FOR VLSI MANUFACTURING - AN APPLICATION FOR LPCVD

被引：27

作者：

LIN, KK

SPANOS, CJ

机构：

[1] University of California at Berkeley, Department of EECS, Berkeley, CA 94720

来源：

IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING | 1990年 / 3卷 / 04期

关键词：

D O I：

10.1109/66.61971

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

An equipment characterization and modeling methodology has been developed. The methodology is based on the development of generic first principle process models. These models are subsequently refined and fitted to specific manufacturing equipment, using a multi-stage D-optimal experimental design. The methodology has been successfully applied to an low pressure chemical vapor deposition (LPCVD) furnace for undoped polysilicon deposition. A 2-stage D-optimal experiment with 24 runs has yielded fitted models for the film growth rate and film residual stress. The calibrated models agree well with the experimental data, and account for the observed variations. © 1990 IEEE

引用

页码：216 / 229

页数：14

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