OPTICAL-PROPERTIES OF LASER-EVAPORATED CUGASE2 FILMS NEAR AND ABOVE THE FUNDAMENTAL ABSORPTION-EDGE

被引：38

作者：

KINDYAK, VV ^{[1
]}

KINDYAK, AS ^{[1
]}

GREMENOK, VF ^{[1
]}

BODNAR, IV ^{[1
]}

RUD, YV ^{[1
]}

MEDVEDKIN, GA ^{[1
]}

机构：

[1] MINSK RADIOENGN INST, MINSK 220600, BELARUS

来源：

THIN SOLID FILMS | 1994年 / 250卷 / 1-2期

关键词：

D O I：

10.1016/0040-6090(94)90160-0

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The absorption coefficient and fundamental transition energies of highly oriented, single-phase, laser-evaporated CuGaSe2 thin films were determined using interferential reflectivity and transmission in the system air-film-substrate-air in the near-IR and visible wavelength range 400-1700 nm. Optical constants of CuGaSe2 films were calculated by solving the system of transcendental equations with the assumption of interference. From the detailed analysis of the structure of the fundamental absorption edge, values for the direct allowed valence to conduction band splitting owing to the crystal field and spin-orbit interaction were estimated.

引用

页码：33 / 36

页数：4

共 8 条

[1] PREPARATION AND PROPERTIES OF LASER-EVAPORATED CUGA0.1IN0.9SE2 THIN-FILMS [J].