PROPERTIES OF EVAPORATED HALL ELEMENTS OF CADMIUM ARSENIDE

被引:6
作者
ZDANOWICZ, L
机构
[1] Department of Physics, Institute of Technology, Wrocław
关键词
D O I
10.1016/0038-1101(68)90025-7
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The thin-film Hall elements of cadmium arsenide, Cd3As2 have been obtained and fundamental parameters of these elements have been examined. The static and dynamic characteristics are linear within the investigated region of magnetic induction B=0 -10 kG. The sensitivity as defined by the slope of the static characteristics ranges from γ=0· 2 to 3·1 V/A kG (depending on the thickness of the film). The maximum output power of the elements defined for B=10 kGand for a nominal control current Ix=50 mA is Pmax=0· 5mW and the nominal efficiency is η=2per cent. The mean temperature coefficients of film resistance and Hall voltage within the temperature interval 0-60°C are α=-0·2%/°C and β=-0·35%/°C. It also has been found that elements covered with a protective layer have good long term stability of these basic parameters. © 1968.
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页码:429 / +
页数:1
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