PRESSURE-DEPENDENCE OF THE METAL-SEMICONDUCTOR TRANSITION IN TAS3

TaS3 exhibits the metal-semiconductor transition at 218 K due to the Peierls instability. The electrical resistance was measured under pressure. It was found that both the transition temperature, Tp, and the activation energy at T=0 K, △(0), decrease with pressure at the rates of dTp dP {reversed tilde equals}-1.3 K kbar and d△(0) dP{reversed tilde equals}-4 K kbar, respectively, while the ratio, △ (0) Tp, is independent of pressure. © 1979.