PHOTO-VOLTAIC CONVERSION IN CU20

被引：23

作者：

TAPIERO, M

NOGUET, C

ZIELINGER, JP

SCHWAB, C

PIERRAT, D

机构：

来源：

REVUE DE PHYSIQUE APPLIQUEE | 1979年 / 14卷 / 01期

关键词：

D O I：

10.1051/rphysap:01979001401023100

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：231 / 236

页数：6

共 19 条

[1] STUDIES OF TUNNEL MOS DIODES .1. INTERFACE EFFECTS IN SILICON SCHOTTKY DIODES [J].

CARD, HC ;

RHODERICK, EH .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1971, 4 (10) :1589-+

[2]

FAHRENBRUCH AL, 1977, SEP PHOT SOL EN C P

[3]

GOODMAN RM, 1961, J APPL PHYS, V32

[4] NEW MODEL FOR INTERPRETING ELECTRIC CONDUCTION PHENOMENA IN CU2O SINGLE-CRYSTALS [J].

NOGUET, C ;

TAPIERO, M ;

ZIELINGER, JP .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1974, 24 (02) :565-574

[5] DIELECTRIC PROPERTIES OF CUPRIC OXIDE FOR AUDIOFREQUENCIES BETWEEN 150 DEGREES K AND 320 DEGREES K [J].

NOGUET, C .

JOURNAL DE PHYSIQUE, 1970, 31 (04) :393-&

[6]

OLSEN LC, 1975, 11TH IEEE PHOT SPEC

[7]

PADOVANI FA, SEMICONDUCTORS SEMIM

[8]

PASTRNYAK I, 1959, SOV PHYS-SOL STATE, V1, P888

[9] LEFFET PHOTOVOLTAIQUE DE SURFACE DANS LE SILICIUM ET SON APPLICATION A LA MESURE DE LA DUREE DE VIE DES PORTEURS MINORITAIRES [J].

QUILLIET, A ;

GOSAR, MP .

JOURNAL DE PHYSIQUE ET LE RADIUM, 1960, 21 (07) :575-578

[10] PHOTOELECTRIC DETERMINATION OF IMAGE FORCE DIELECTRIC CONSTANT FOR HOT ELECTRONS IN SCHOTTKY BARRIERS [J].

SZE, SM ;

CROWELL, CR ;

KAHNG, D .

JOURNAL OF APPLIED PHYSICS, 1964, 35 (08) :2534-&

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