HIGH-POWER EMISSION FROM STRAINED DQW CIRCULAR-GRATING SURFACE-EMITTING DBR LASERS

被引：11

作者：

FALLAHI, M ^{[1
]}

DION, M ^{[1
]}

CHATENOUD, F ^{[1
]}

TEMPLETON, IM ^{[1
]}

BARBER, R ^{[1
]}

机构：

[1] SOLID STATE OPTOELECTR CONSORTIUM,OTTAWA,ON,CANADA

来源：

ELECTRONICS LETTERS | 1993年 / 29卷 / 24期

关键词：

DISTRIBUTED BRAGG REFLECTOR LASERS; SEMICONDUCTOR QUANTUM WELLS;

D O I：

10.1049/el:19931415

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High power operation of circular-grating surface-emitting distributed Bragg reflector lasers is demonstrated. The structure is a strained InGaAs/GaAs double quantum well grown by one step MBE. Circular gratings are defined by electron beam lithography. A surface emission power over 100mW is obtained.

引用

页码：2117 / 2118

页数：2

共 8 条

[1] SPATIAL MODES OF A CONCENTRIC-CIRCLE-GRATING SURFACE-EMITTING, ALGAAS/GAAS QUANTUM-WELL SEMICONDUCTOR-LASER
ERDOGAN, T
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[J]. APPLIED PHYSICS LETTERS, 1992, 60 (15) : 1773 - 1775
[2] LOW DIVERGENCE ELECTRICALLY PUMPED CIRCULAR-GRATING SURFACE-EMITTING DBR LASER ON AN INGAAS/GAAS STRUCTURE
FALLAHI, M
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[J]. ELECTRONICS LETTERS, 1993, 29 (16) : 1412 - 1414
[3] ELECTRICALLY PUMPED CIRCULAR-GRATING SURFACE-EMITTING DBR LASER ON INGAAS STRAINED SINGLE-QUANTUM-WELL STRUCTURE
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[6] SINGLE-MODE BEHAVIOR OF A CIRCULAR GRATING FOR POTENTIAL DISK-SHAPED DFB LASERS
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[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1990, 26 (03) : 473 - 481
[7] ROOM-TEMPERATURE OPERATION OF ELECTRICALLY PUMPED SURFACE-EMITTING CIRCULAR GRATING DBR LASER
WU, C
SVILANS, M
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[J]. ELECTRONICS LETTERS, 1992, 28 (11) : 1037 - 1039
[8] WU C, IN PRESS IEEE J QUAN

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