EXPERIMENTAL SINGLE FLUX QUANTUM NDRO JOSEPHSON MEMORY CELL

被引:25
作者
HENKELS, WH
GREINER, JH
机构
[1] IBM T. J. Watson Research Center., Yorktown Heights
关键词
D O I
10.1109/JSSC.1979.1051272
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Single flux quantum NDRO Josephson memory cells which store an energy of only ·- 6 × 10–20 J have been successfully fabricated and operated for the first time. Margin enhancement due to quantization, and low operating currents render this cell an attractive basis for a < 1 ns access-time Josephson cache memory designed with a 2.5 µm technology. Copyright © 1979 by The Institute of Electrical and Electronics Engineers, Inc.
引用
收藏
页码:794 / 796
页数:3
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