MAGNETIC-MOMENT FORMATION OF FE AND MN IN CRYSTALLINE AND AMORPHOUS GA - AN INSITU LOW-TEMPERATURE ION-IMPLANTATION STUDY

被引：2

作者：

HABISREUTHER, T ^{[1
]}

MIEHLE, W ^{[1
]}

PLEWNIA, A ^{[1
]}

ZIEMANN, P ^{[1
]}

机构：

[1] UNIV CONSTANCE,FAK PHYS,W-7750 CONSTANCE,GERMANY

来源：

PHYSICAL REVIEW B | 1992年 / 46卷 / 22期

关键词：

D O I：

10.1103/PhysRevB.46.14566

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Low-temperature (T < 10 K) ion implantation of Fe and Mn is applied to produce metastable random solutions of these impurities in crystalline beta-Ga and amorphous (a-) Ga films. Because of their restricted stability (a-Ga < 17 K, beta-Ga < 65 K), the Ga-host phases have to be prepared by quenching techniques in situ. Using the concentration dependence of the superconducting transition temperature as a probe for the magnetic behavior it is found that only Mn forms a long-lived magnetic moment in both Ga modifications, while the results for Fe are consistent with a rapidly fluctuating short-lived moment.

引用

页码：14566 / 14569

页数：4

共 21 条

[1]

ABRIKOSOV AA, 1961, ZH EKSP TEOR FIZ, V12, P1243

[2] LOCALIZED MAGNETIC STATES IN METALS [J].