QUENCHING OF THE TOTAL LUMINESCENCE OF HO3+ IN HOLIF4 CRYSTALS

被引：7

作者：

COURROL, LC ^{[1
]}

GOMES, L ^{[1
]}

MORATO, SP ^{[1
]}

机构：

[1] IPEN CNEN SP, BR-05422970 SAO PAULO, BRAZIL

来源：

PHYSICAL REVIEW B | 1995年 / 51卷 / 06期

关键词：

D O I：

10.1103/PhysRevB.51.3344

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The luminescent-channel efficiency for Ho3+ ions in HoLiF4 crystals was measured and compared with the case of Ho3+ as a low-concentration dopant (1.71%) in crystals of YLiF4. The 5S2→5I7, 5I8 luminescent transitions are strongly quenched by two possible cross-relaxation processes: one with almost zero mismatch energy, favoring the population of the 5I5, 5I6, and 5I7 levels, and the other, a laser transition 5I7→5I8 in the mid-infrared region. Also seen was a strong decrease of the total Ho3+ luminescence by approximately 6.6 times in HoLiF4 crystals from 10 to 300 K. This quenching effect was attributed to an energy transfer from the Ho3+ excited 5I6 and 5I7 levels to traps present in the crystal. © 1995 The American Physical Society.

引用

页码：3344 / 3352

页数：9

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