SUPERCONDUCTING AL-TRILAYER TUNNEL JUNCTIONS FOR USE AS X-RAY DETECTORS

被引：13

作者：

Gaidis, M. C. ^{[1
]}

Friedrich, S. ^{[1
]}

Prober, D. E. ^{[1
]}

Moseley, S. H. ^{[2
]}

Szymkowiak, A. E. ^{[2
]}

机构：

[1] Yale Univ, Dept Appl Phys, New Haven, CT 06520 USA

[2] NASA, Goddard Space Flight Ctr, Greenbelt, MD 20771 USA

来源：

IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY | 1993年 / 3卷 / 01期

关键词：

D O I：

10.1109/77.233445

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have developed photolithographic techniques to fabricate high quality Al-Al Oxide-Al superconducting tunnel junctions for use in x-ray detectors. These devices are designed to incorporate approximate to 1 mu m thick superconducting x-ray absorbers for the detection of <10 keV single photons. In an effort to increase energy resolution, superconductor "bandgap engineering" with lateral and vertical trapping has been used to shorten quasiparticle tunneling times and diffusion lengths and to prevent quasiparticle diffusion away from the tunnel junction. Methods have been developed for overcoming materials incompatibility and device degradation upon thermal cycling; these are reported. We also report on the use of a non-rectangular tunnel junction geometry which reduces the magnetic field needed to suppress the Josephson current for stable biasing. Work in progress to measure the energy resolution of these x-ray detectors at 0.35 K is also discussed.*

引用

页码：2088 / 2091

页数：4

共 13 条

[1] QUASI-PARTICLE TRAPPING AND THE QUASI-PARTICLE MULTIPLIER [J].